Real-time observation of initial stage on Si(001) oxidation studied by O-1s photoemission spectroscopy using synchrotron radiation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 7 B, 2003, Pages 4676-4679

  Yoshigoe, Akitaka ^a   Moritani, Kousuke ^a,b   Teraoka, Yuden ^a  

^a JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

O2 gas; Reaction kinetics model; Real time photoemission spectroscopy; Si(001) surface; Synchrotron radiation; Thermal oxidation

Indexed keywords

ADSORPTION; ELECTRON ENERGY ANALYZERS; PHOTOEMISSION; PHOTONS; PRESSURE; REACTION KINETICS; SURFACE CHEMISTRY; SYNCHROTRON RADIATION; THERMOOXIDATION;

AUTOCATALYTIC REACTION KINETICS; LANGMUIR-TYPE ADSORPTION; PHOTOEMISSION MEASUREMENT; PHOTOEMISSION SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 0141763610     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.4676     Document Type: Article

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