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Journal of Photopolymer Science and Technology

Volumn 15, Issue 3, 2002, Pages 529-534

Application of VEMA type ArF resist to sub-100nm lithography

(9) Kim, Hyun Woo a Lee, Sook a Choi, Sang Jun a Woo, Sang Gyun a Chae, Yun Sook a Kim, Jisoo a Moon, Joo Tae a Kavanagh, Robert b Barclay, George b

a SAMSUNG Electronics (South Korea)

b SHIPLEY COMPANY (United States)

Author keywords

ArF; Chemically amplified resist; Lithography; Photoresist; VEMA

Indexed keywords

ACRYLIC ACID; ARGON; CYCLOALKENE; FLUORIDE; MALEIC ANHYDRIDE; POLYMER; UNCLASSIFIED DRUG; VINYL DERIVATIVE; VINYL ETHER MALEIC ANHYDRIDE;

ARTICLE; DEVICE; ELECTRON BEAM; LITHOGRAPHY; MATERIAL COATING; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTY;

EID: 0036363152 PISSN: 09149244 EISSN: None Source Type: Journal
DOI: 10.2494/photopolymer.15.529 Document Type: Article

Times cited : (4)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.