Mott-Schottky analysis of nanoporous semiconductor electrodes in dielectric state deposited on SnO2(F) conducting substrates

Journal of the Electrochemical Society

Volumn 150, Issue 6, 2003, Pages

  Fabregat Santiago, Francisco ^a   Garcia Belmonte, Germà ^a   Bisquert, Juan ^a   Bogdanoff, Peter ^b   Zaban, Arie ^c  

^a UNIVERSITAT JAUME I   (Spain)

^b HAHN MEITNER INSTITUT   (Germany)

^c BAR ILAN UNIVERSITY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT DENSITY; ELECTROLYTES; FLUIDIZATION; NANOSTRUCTURED MATERIALS; ONE DIMENSIONAL; PARTICLES (PARTICULATE MATTER); REACTION KINETICS; SEMICONDUCTOR MATERIALS; SUBSTRATES;

HELMHOLTZ CAPACITANCE; LATTICE MATCHING; MOTT-SCHOTTKY ANALYSIS; NANOPOROUS SEMICONDUCTOR ELECTRODES;

ELECTROCHEMICAL ELECTRODES;

EID: 0038269196     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1568741     Document Type: Article

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