Excellent field emission from carbon nanotubes grown by microwave-heated chemical vapor deposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 4, 2003, Pages 1655-1659

  Huang, J H ^a   Chuang, C C ^a   Tsai, C H ^a   Chen, W J ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSTS; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; MICROWAVE HEATING; NICKEL; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY;

FIELD EMISSION;

CARBON NANOTUBES;

EID: 0141681154     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1591750     Document Type: Conference Paper

References (17)

1. S. Iijima, Nature (London) 354, 56 (1991).
2. C. Journet and P. Bernier, Appl. Phys. A: Mater. Sci. Process. A67, 1 (1998).
3. J.-M. Bonard, J.-P. Salvetat, T. Stöckli, L. Forró, and A. Chàtelain, Appl. Phys. A: Mater. Sci. Process. A69, 245 (1999).
4. X. P. Xu and G. R. Brandes, Appl. Phys. Lett. 74, 2549 (1999).
5. Q. H. Wang, T. D. Corrigan, J. Y. Dai, R. P. H. Chang, and A. R. Krauss, Appl. Phys. Lett. 70, 3308 (1997).
6. A. M. Rao, D. Jacques, R. C. Haddon, W. Zhu, C. Bower, and S. Jin, Appl. Phys. Lett. 76, 3813 (2000).
7. C. J. Lee, J. Park, S. Y. Kang, and J. H. Lee, Chem. Phys. Lett. 326, 175 (2000).
8. Z. W. Pan, F. C. K. Au, H. L. Lai, W. Y. Zhou, L. F. Sun, Z. Q. Liu, D. S. Tang, C. S. Lee, S. T. Lee, and S. S. Xie, J. Phys. Chem. B 105, 1519 (2001).
9. H. Murakami, M. Hirakawa, C. Tanaka, and H. Yamakawa, Appl. Phys. Lett. 76, 1776 (2001).
10. S. Fan, M. G. Chapline, N. R. Franklin, T. W. Tombier, A. M. Cassel, and H. Dai, Science 283, 512 (1999).
11. J.-M. Bonard, J.-P. Salvetat, Th. Stöckli, W. A. de Heer, L. Forró, and A. Châtelain, Appl. Phys. Lett. 73, 918 (1998).
12. W. Zhu, C. Bower, O. Zhou, G. Kochanski, and S. Jin, Appl. Phys. Lett. 75, 873 (1999).
13. M. Sveningsson, R. E. Morjan, O. A. Nerushev, Y. Sato, J. Bäckström, E. E. B. Campbell, and F. Rohmund, Appl. Phys. A: Mater. Sci. Process. A73, 409 (2001).
14. T. F. Kuo, A. Y. Juang, C. H. Tsai, Y. M. Tsau, H. F. Cheng, and I. N. Lin, J. Vac. Sci. Technol. B 19, 1030 (2001).
15. Z. P. Huang, D. Z. Wang, J. G. Wen, M. Sennett, H. Gibson, and Z. F. Ren, Appl. Phys. A: Mater. Sci. Process. A74, 387 (2002).
16. J. H. Huang, C. C. Chuang, C. H. Tsai, and W. J. Chen, in Proceedings of the 15th IVMC and 48th IFES Technical Digest, Lyon, France 7-11, July (2002), Vol. 1/2, p. OB4.11.
17. W. Li et al., Appl. Phys. Lett. 70, 2684 (1997).