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Volumn 125, Issue 2 SPEC., 2003, Pages 289-293

Calibrate piezoresistive stress sensors through the assembled structure

Author keywords

[No Author keywords available]

Indexed keywords

CALIBRATION; ELECTRIC RESISTANCE MEASUREMENT; ELECTRONICS PACKAGING; INTEGRATED CIRCUIT MANUFACTURE; MATHEMATICAL MODELS; MICROELECTRONIC PROCESSING; RESISTORS; SENSORS; SILICON WAFERS; TEMPERATURE;

EID: 0141606835     PISSN: 10437398     EISSN: None     Source Type: Journal    
DOI: 10.1115/1.1572904     Document Type: Article
Times cited : (14)

References (14)
  • 2
    • 0039886668 scopus 로고    scopus 로고
    • On the study of piezoresistive stress sensors for microelectronic packaging
    • Lwo, B. J., Kao, C. H., Chen, T. S., and Chen, Y. S., 2002, "On the Study of Piezoresistive Stress Sensors for Microelectronic Packaging," ASME J. Electron. Packag., 124(1), pp. 22-26.
    • (2002) ASME J. Electron. Packag. , vol.124 , Issue.1 , pp. 22-26
    • Lwo, B.J.1    Kao, C.H.2    Chen, T.S.3    Chen, Y.S.4
  • 3
    • 0012864294 scopus 로고    scopus 로고
    • In-plane packaging stress measurements through piezoresistive sensors
    • June
    • Lwo, B. J., Chen, T. S., Kao, C. H., and Lin, Y. L., 2002, "In-Plane Packaging Stress Measurements Through Piezoresistive Sensors," ASME J. Electron. Packag., 124(2), June, pp. 115-121.
    • (2002) ASME J. Electron. Packag. , vol.124 , Issue.2 , pp. 115-121
    • Lwo, B.J.1    Chen, T.S.2    Kao, C.H.3    Lin, Y.L.4
  • 4
    • 0033308620 scopus 로고    scopus 로고
    • Correlation of flip chip underfill process parameters and material properties with in-process stress generation
    • Palaniappan, P., Baldwin, D. F., Selman, P. J., Wu, J., and Wang, C. P., 1999, "Correlation of Flip Chip Underfill Process Parameters and Material Properties with In-Process Stress Generation," IEEE Trans. Electronic Packaging Manufacturing, 22, pp. 53-62.
    • (1999) IEEE Trans. Electronic Packaging Manufacturing , vol.22 , pp. 53-62
    • Palaniappan, P.1    Baldwin, D.F.2    Selman, P.J.3    Wu, J.4    Wang, C.P.5
  • 6
    • 0013255484 scopus 로고
    • Effect of pressure on the electrical properties of indium antimonide
    • Long, D., 1955, "Effect of Pressure on the Electrical Properties of Indium Antimonide," Phys. Rev., 99, pp. 388-390.
    • (1955) Phys. Rev. , vol.99 , pp. 388-390
    • Long, D.1
  • 7
    • 0000023102 scopus 로고
    • Piezoresistive properties of silicon diffused layers
    • Tufte, O. N., and Stelzer, E. L., 1963, "Piezoresistive Properties of Silicon Diffused Layers," J. Appl. Phys., 34, pp. 313-318.
    • (1963) J. Appl. Phys. , vol.34 , pp. 313-318
    • Tufte, O.N.1    Stelzer, E.L.2
  • 8
    • 0001477655 scopus 로고
    • Piezoresistive properties od heavily doped n-type silicon
    • Tufte, O. N., and Stelzer, E. L., 1964, "Piezoresistive Properties od Heavily Doped n-Type Silicon," Phys. Rev. A 133A, pp. A1705-1716.
    • (1964) Phys. Rev. A , vol.133 A
    • Tufte, O.N.1    Stelzer, E.L.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.