-
1
-
-
77956703530
-
Thermal properties of vertical-cavity surface-emitting semiconductor lasers
-
E. Wolf, Ed. Amsterdam, The Netherlands: Elsevier
-
W. Nakwaski and M. Osiński, "Thermal properties of vertical-cavity surface-emitting semiconductor lasers," in Progress in Optics, E. Wolf, Ed. Amsterdam, The Netherlands: Elsevier, 1998, vol. 38, pp. 165-262.
-
(1998)
Progress in Optics
, vol.38
, pp. 165-262
-
-
Nakwaski, W.1
Osiński, M.2
-
2
-
-
0035927047
-
Lateral spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions
-
May
-
S. R. Jeon, Y.-H. Song, H. J. Jang, G. M. Yang, S. W. Hwang, and S. J. Son, "Lateral spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions," Appl. Phys. Lett., vol. 78, pp. 3265-3267, May 2001.
-
(2001)
Appl. Phys. Lett.
, vol.78
, pp. 3265-3267
-
-
Jeon, S.R.1
Song, Y.-H.2
Jang, H.J.3
Yang, G.M.4
Hwang, S.W.5
Son, S.J.6
-
3
-
-
0000297552
-
Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN
-
Oct.
-
R.-H. Horng, D.-S. Wuu, Y.-C. Lien, and W.-H. Lan, "Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN," Appl. Phys. Lett., vol. 79, pp. 2925-2927, Oct. 2001.
-
(2001)
Appl. Phys. Lett.
, vol.79
, pp. 2925-2927
-
-
Horng, R.-H.1
Wuu, D.-S.2
Lien, Y.-C.3
Lan, W.-H.4
-
4
-
-
84941463951
-
On carrier injection and gain dynamics in quantum well lasers
-
June
-
N. Tessler and G. Eisenstein, "On carrier injection and gain dynamics in quantum well lasers," IEEE J. Quantum Electron., vol. 29, pp. 1586-1595, June 1993.
-
(1993)
IEEE J. Quantum Electron.
, vol.29
, pp. 1586-1595
-
-
Tessler, N.1
Eisenstein, G.2
-
5
-
-
0000420793
-
Interwell inhomogeneity of carrier injection in InGaN/GaN/AlGaN muliquantum well lasers
-
Nov.
-
K. Domen, R. Soejima, A. Kuramata, K. Horino, S. Kubota, and T. Tanahashi, "Interwell inhomogeneity of carrier injection in InGaN/GaN/AlGaN muliquantum well lasers," Appl. Phys. Lett., vol. 73, pp. 2775-2777, Nov. 1998.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 2775-2777
-
-
Domen, K.1
Soejima, R.2
Kuramata, A.3
Horino, K.4
Kubota, S.5
Tanahashi, T.6
-
6
-
-
0031648461
-
Many-body optical gain of wurtzite GaN-based quantum-well lasers and comparison with experiment
-
Jan.
-
S.-H. Park and S.-L. Chuang, "Many-body optical gain of Wurtzite GaN-based quantum-well lasers and comparison with experiment," Appl. Phys. Lett., vol. 72, pp. 287-289, Jan. 1998.
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 287-289
-
-
Park, S.-H.1
Chuang, S.-L.2
-
7
-
-
0035925416
-
Some aspects of designing an efficient nitride VCSEL resonator
-
May
-
P. Maćkowiak and W. Nakwaski, "Some aspects of designing an efficient nitride VCSEL resonator," J. Phys. D, Appl. Phys., vol. 34, pp. 954-958, May 2001.
-
(2001)
J. Phys. D, Appl. Phys.
, vol.34
, pp. 954-958
-
-
Maćkowiak, P.1
Nakwaski, W.2
-
8
-
-
0031191952
-
The effective frequency method in the analysis of vertical-cavity surface-emitting lasers
-
July
-
H. Wenzel and H.-J. Wünsche, "The effective frequency method in the analysis of vertical-cavity surface-emitting lasers," IEEE J. Quantum Electron., vol. 33, pp. 1156-1162, July 1997.
-
(1997)
IEEE J. Quantum Electron.
, vol.33
, pp. 1156-1162
-
-
Wenzel, H.1
Wünsche, H.-J.2
-
9
-
-
0000869695
-
Resonant-cavity InGaN quantum-well blue light-emitting diodes
-
Sept.
-
Y.-K. Song, M. Diagne, H. Zhou, A. V. Nurmikko, R. P. Schneider Jr, and T. Takeuchi, "Resonant-cavity InGaN quantum-well blue light-emitting diodes," Appl. Phys. Lett., vol. 77, pp. 1744-1746, Sept. 2000.
-
(2000)
Appl. Phys. Lett.
, vol.77
, pp. 1744-1746
-
-
Song, Y.-K.1
Diagne, M.2
Zhou, H.3
Nurmikko, A.V.4
Schneider R.P., Jr.5
Takeuchi, T.6
-
11
-
-
1842724516
-
Optical constants of epitaxial AlGaN films and their temperature dependence
-
Nov.
-
D. Brunner, H. Angerer, E. Bustarred, F. Freudenberg, R. Hoepler, R. Dimitrov, O. Ambacher, and M. Stzutzmann, "Optical constants of epitaxial AlGaN films and their temperature dependence," J. Appl. Phys., vol. 82, pp. 5090-5096, Nov. 1997.
-
(1997)
J. Appl. Phys.
, vol.82
, pp. 5090-5096
-
-
Brunner, D.1
Angerer, H.2
Bustarred, E.3
Freudenberg, F.4
Hoepler, R.5
Dimitrov, R.6
Ambacher, O.7
Stzutzmann, M.8
-
12
-
-
0000522945
-
Refractive index of InGaN/GaN quantum well
-
Dec.
-
M. Mandy, Y. Leung, A. B. Djurisic, and E. H. Li, "Refractive index of InGaN/GaN quantum well," J. Appl. Phys., vol. 84, pp. 6312-6317, Dec. 1998.
-
(1998)
J. Appl. Phys.
, vol.84
, pp. 6312-6317
-
-
Mandy, M.1
Leung, Y.2
Djurisic, A.B.3
Li, E.H.4
-
14
-
-
0001186088
-
Mode spacing 'anomaly' in InGaN blue lasers
-
Feb.
-
H. X. Jiang and J. Y. Lin, "Mode spacing 'anomaly' in InGaN Blue lasers," Appl. Phys. Lett., vol. 74, pp. 1066-1068, Feb. 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 1066-1068
-
-
Jiang, H.X.1
Lin, J.Y.2
-
15
-
-
0000166762
-
High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n-GaN/sapphire (0001): Doping dependence
-
Sept.
-
D. I. Florescu, V. A. Asnin, L. G. Mourokh, F. H. Pollak, R. J. Molnar, and C. E. C. Wood, "High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n-GaN/sapphire (0001): Doping dependence," J. Appl. Phys., vol. 88, pp. 3295-3300, Sept. 2000.
-
(2000)
J. Appl. Phys.
, vol.88
, pp. 3295-3300
-
-
Florescu, D.I.1
Asnin, V.A.2
Mourokh, L.G.3
Pollak, F.H.4
Molnar, R.J.5
Wood, C.E.C.6
-
16
-
-
21544437251
-
0.92N grown by metal-organic vapor phase epitaxy
-
Aug.
-
0.92N grown by metal-organic vapor phase epitaxy," Appl. Phys. Lett., vol. 65, pp. 593-594, Aug. 1994.
-
(1994)
Appl. Phys. Lett.
, vol.65
, pp. 593-594
-
-
Tanaka, T.1
Watanabe, A.2
Amano, H.3
Kobayashi, Y.4
Akasaki, I.5
Yamazaki, S.6
Koike, M.7
-
17
-
-
0020194066
-
1-xN films prepared by reactive molecular beam epitaxy
-
Oct.
-
1-xN films prepared by reactive molecular beam epitaxy," J. Appl. Phys., vol. 53, pp. 6844-6848, Oct. 1982.
-
(1982)
J. Appl. Phys.
, vol.53
, pp. 6844-6848
-
-
Yoshida, S.1
Misawa, S.2
Gonda, S.3
-
18
-
-
0038436228
-
Activation energies of Si donors in GaN
-
May
-
W. Götz, N. M. Johnson, C. Chen, H. Liu, C. Kuo, and W. Imler, "Activation energies of Si donors in GaN," Appl. Phys. Lett., vol. 68, pp. 3144-3146, May 1996.
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 3144-3146
-
-
Götz, W.1
Johnson, N.M.2
Chen, C.3
Liu, H.4
Kuo, C.5
Imler, W.6
-
19
-
-
0032607989
-
Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures
-
Apr.
-
F. D. Sala, A. D. Carlo, P. Lugli, F. Bernardini, V. Fiorentini, R. Scholz, and J.-M. Jancu, "Free-carrier screening of polarization fields in Wurtzite GaN/InGaN laser structures," Appl. Phys. Lett., vol. 74, pp. 2002-2004, Apr. 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 2002-2004
-
-
Sala, F.D.1
Carlo, A.D.2
Lugli, P.3
Bernardini, F.4
Fiorentini, V.5
Scholz, R.6
Jancu, J.-M.7
-
20
-
-
0033242985
-
Finite-temperature, band-gap renormalization in highly photoexcited GaN epilayers
-
May
-
A. Zukauskas, S. Juresenas, G. Kurilicik, G. Tamulaitis, M. S. Shur, R. Gaska, J. W. Yang, and M. A. Khan, "Finite-temperature, band-gap renormalization in highly photoexcited GaN epilayers," Phys. Stat. Sol. (b), vol. 216, pp. 501-504, May 1999.
-
(1999)
Phys. Stat. Sol. (b)
, vol.216
, pp. 501-504
-
-
Zukauskas, A.1
Juresenas, S.2
Kurilicik, G.3
Tamulaitis, G.4
Shur, M.S.5
Gaska, R.6
Yang, J.W.7
Khan, M.A.8
-
21
-
-
0035956158
-
Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction
-
Nov.
-
M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, "Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction," Appl. Phys. Lett., vol. 79, pp. 3720-3722, Nov. 2001.
-
(2001)
Appl. Phys. Lett.
, vol.79
, pp. 3720-3722
-
-
Diagne, M.1
He, Y.2
Zhou, H.3
Makarona, E.4
Nurmikko, A.V.5
Han, J.6
Waldrip, K.E.7
Figiel, J.J.8
Takeuchi, T.9
Krames, M.10
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