Finite-temperature band gap renormalization in highly photoexcited GaN epilayers

Physica Status Solidi (B) Basic Research

Volumn 216, Issue 1, 1999, Pages 501-504

  Zukauskas A ^a   Jursenas S ^a   Kurilcik G ^a   Tamulaitis, G ^a   Shur, M S ^b   Gaska, R ^b   Yang, J W ^c   Khan, M A ^c  

^a VILNIUS UNIVERSITY   (Lithuania)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c The Department of Mechanical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033242985     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199911)216:1<501::AID-PSSB501>3.0.CO;2-B     Document Type: Article

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