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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 7 B, 2003, Pages 4667-4670

Characterization investigation of β-FeSi2 semiconductor by in situ ultrahigh-vacuum transmission electron microscopy

(5) Zhang, Qi a,b Tanaka, Miyoko a Takeguchi, Masaki a Han, Ming a Furuya, Kazuo a

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

b Northwestern University (United States)

Author keywords

Beta FeSi2; EELS; Fe Si (111); UHV TEM; White line

Indexed keywords

ANNEALING; CALCULATIONS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; IRON COMPOUNDS; MICROSTRUCTURE; MOIRE FRINGES; MOLECULAR BEAM EPITAXY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM;

FIELD EMISSION GUN; FOURIER RATIO; IRON SILICIDE; ULTRAHIGH VACUUM TRANSMISSION ELECTRON MICROSCOPY; WHITE LINE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0141569288 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.4667 Document Type: Article

Times cited : (7)

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