8 b Resolution 360 μs write time nonvolatile analog memory based on differentially balanced constant-tunneling-current scheme (DBCS)

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 1998, Pages 336-337,-459

  Kim, K h ^a   Lee, K ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; CMOS INTEGRATED CIRCUITS; ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRON TUNNELING; ERROR ANALYSIS; MICROPROCESSOR CHIPS; OPERATIONAL AMPLIFIERS; PROM;

DIFFERENTIALLY BALANCED CONSTANT TUNNELING CURRENT SCHEMES (DBCS); ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM); SCHMIDT TRIGGERS;

NONVOLATILE STORAGE;

EID: 0006933471     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)