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Volumn 3, Issue 4, 2003, Pages 479-483

Field effect transistor based on a modified DNA base

Author keywords

[No Author keywords available]

Indexed keywords

DNA;

EID: 0141521693     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl034046c     Document Type: Article
Times cited : (122)

References (24)
  • 14
    • 0141804855 scopus 로고    scopus 로고
    • note
    • 1c The probability of the ribbons being perpendicular to the tip axis is low; in most cases the ribbons are oriented at an arbitrary angle with respect to the tip axis, so that a sizable dipole-field component exists along it. This induces the rectification, with typical rectification ratio of the order of 3.
  • 16
    • 0141804856 scopus 로고    scopus 로고
    • note
    • G are still linear. A value of 0.66 is obtained for the maximum voltage gain.
  • 20
    • 0141470036 scopus 로고    scopus 로고
    • note
    • The lack of saturation in the drain-source current makes the output current quite sensitive to small changes in the drain-source voltage and gives rise to the issues of stability against drift. If the operation conditions are changed, a decrease of both output resistance and gain can be generated.
  • 22
    • 0141581699 scopus 로고    scopus 로고
    • note
    • 21,22 Moreover, this particular geometry is not suitable in our case, since the used cast deposition method for the self-assembly requires a surface to take place.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.