Overcoming the resolution challenge using special illumination techniques to print 50/50 nm nested contact holes at 157 nm wavelength

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5040 III, Issue , 2003, Pages 1352-1362

  Baba Ali, Nabila ^a   Sewell, Harry ^a   Kreuzer, Justin ^a  

^a ASML US Inc   (United States)

Author keywords

157 nm; Aerial image; Alternating PSM (CAPSM); Attenuating PSM; Chromeless; Contact holes; High NA; Immersion lithography; Phase checkerboard; Polarization; Resist image

Indexed keywords

COMPUTER SIMULATION; LIGHT POLARIZATION; LIGHTING; MASKS; OPTICAL RESOLVING POWER; OPTIMIZATION; PHASE SHIFT; ULTRAVIOLET RADIATION;

CHROMELESS ALTERNATING PHASE SHIFT MASK; CONTACT HOLES; EXTREME ULTRAVIOLET LITHOGRAPHY; IMMERSION LITHOGRAPHY; PHASE SHIFT MASK; QUADRUPOLE ILLUMINATION;

LITHOGRAPHY;

EID: 0141498359     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485328     Document Type: Conference Paper

References (6)

1. Paul Graeupner et al., "Solutions for printing sub-100 nm contact with ArF," SPIE, Vol. 4691, 503 (2002)
2. Z. Ma et al., "Impact of illumination coherence and polarization on the imaging of attenuated phase shift masks," SPIE, Vol. 4346, 1522, (2001).
3. Robert Socha et al., "Forbidden pitches for 130 nm lithography and below," SPIE, Vol. 4000, 1140 (2000).
4. Xuelong Shi et al., "Understanding the forbidden pitch phenomenon and assist feature placement", SPIE Vol. 4689, 985, (2002).
5. Marc D. Levenson et al., "The Vortex mask: Making 80 nm contacts with a twist!" SPIE, Vol. 4889 (2002).
6. A. Grassman et al., "Contact hole production by means of crossing sudden phase shift edges of a single phase mask," International patent WO 01/22164 A1 (2001).