Si(111)-√21 × √21-(Ag+Cs) surface studied by scanning tunneling microscopy and angle-resolved photoemission spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 7 B, 2003, Pages 4659-4662

  Liu, Canhua ^a   Matsuda, Iwao ^a   Morikawa, Harumo ^a   Okino, Hiroyuki ^a   Okuda, Taichi ^a   Kinoshita, Toyohiko ^a   Hasegawa, Shuji ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Angle resolved photoemission spectroscopy; Scanning tunneling microscopy; Si(111); Surface superstructure

Indexed keywords

ATOMS; CESIUM; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; FERMI LEVEL; PHOTOEMISSION; SCANNING TUNNELING MICROSCOPY; SUBSTRATES; SURFACE STRUCTURE; ULTRAHIGH VACUUM;

ANGLE RESOLVED PHOTOEMISSION SPECTROSCOPY; ATOMIC ARRANGEMENT; SURFACE STATE BAND; SURFACE SUPERSTRUCTURE;

SEMICONDUCTING SILICON;

EID: 0141457693     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.4659     Document Type: Article

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