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Volumn 190, Issue 1-4, 2002, Pages 121-128

Core-level photoemission of the Si(1 1 1)-√21 × √21-Ag surface using synchrotron radiation

(8) Tong, Xiao a Ohuchi, Satoru b Tanikawa, Takehiro b Harasawa, Ayumi b Okuda, Taichi b Aoyagi, Yoshinobu a Kinoshita, Toyohiko b Hasegawa, Shuji b

a INST OF PHYS AND CHEMICAL RESEARCH (Japan)

b UNIVERSITY OF TOKYO (Japan)

Author keywords

Photoemission spectroscopy; Silicon; Silver

Indexed keywords

ADSORPTION; ATOMS; EMISSION SPECTROSCOPY; PHOTOEMISSION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SILICON; SILVER; SYNCHROTRON RADIATION;

PHOTOEMISSION SPECTROSCOPY;

SURFACE PHENOMENA;

EID: 0037042027 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(01)00854-6 Document Type: Article

Times cited : (10)

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