Low-energy electron-enhanced etching of HgCdTe

Journal of Electronic Materials

Volumn 32, Issue 7, 2003, Pages 677-685

  Kim, Jaehwa ^a   Koga, T S ^a   Gillis, H P ^a   Goorsky, Mark S ^a   Garwood, Gerald A ^b   Varesi, John B ^b   Rhiger, David R ^b   Johnson, Scott M ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b RAYTHEON COMPANY   (United States)

Author keywords

CH4 H2 N2 Ar; Etching; HgCdTe; Low energy electron enhanced etching (LE4)

Indexed keywords

ARGON; ELECTRONS; ETCHING; HYDROGEN; MERCURY COMPOUNDS; METHANE; THERMAL EFFECTS;

ELECTRON-ENHANCED ETCHING;

INFRARED DETECTORS;

EID: 0043269240     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0052-z     Document Type: Conference Paper

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