Site-sensitive yield of atomic emission induced by laser irradiation on Si(111)-7×7 surface

Solid State Communications

Volumn 98, Issue 10, 1996, Pages 913-916

  Ishikawa, Ken'ichi ^a   Kanasaki, Jun'ichi ^a   Tanimura, Katsumi ^a   Nakai, Yasuo ^a,b  

^a NAGOYA UNIVERSITY   (Japan)

^b DAIDO UNIVERSITY   (Japan)

Author keywords

A. semiconductors; A. surfaces and interfaces; B. laser processing; C. scanning tunneling microscopy

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ELECTRON EMISSION; IRRADIATION; LASER PULSES; MELTING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON;

ADATOM SITE VACANCIES; ADATOMS; LASER INDUCED ATOMIC EMISSION;

SURFACES;

EID: 0030165191     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)80018-4     Document Type: Article

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