The effect of lamps radius on thermal stresses for rapid thermal processing system

Journal of Manufacturing Science and Engineering

Volumn 125, Issue 3, 2003, Pages 504-511

  Chao, Ching Kong ^a   Hung, Shih Yu ^a   Yu, Cheng Ching ^b  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COOLING; MICROELECTRONICS; SHEAR STRESS; THERMAL STRESS;

THERMAL PROCESSING SYSTEMS;

ELECTRIC LAMPS;

EID: 0043236000     PISSN: 10871357     EISSN: None     Source Type: Journal    
DOI: 10.1115/1.1579048     Document Type: Article

References (24)

1. Gyurcsik, R. S., Riley, T. J., and Sorrell, F. Y., 1991, "A Model for Rapid Thermal Processing: Achieving Uniformity Through Lamp Control," IEEE Trans. Semicond. Manuf., 4(1), pp. 9-13.
2. Roozeboom, F., 1992, Manufacturing Equipment Issues in Rapid Thermal Processing, Academic Press, New York.
3. Hu, S. M., 1969, "Temperature Distribution and Stresses in Circular Wafers in a Row During Radiative Cooling," J. Appl. Phys., 40(11), pp. 4413-4423.
4. Lord, H. A., 1988, "Thermal and Stress Analysis of Semiconductor Wafers in a Rapid Thermal Processing Oven," IEEE Trans. Semicond. Manuf., 1(3), pp. 105-114.
5. Young, G. L., and McDonald, K. A., 1990, "Effect of Radiation Shield Angle on Temperature and Stress Profiles During Rapid Thermal Annealing," IEEE Trans. Semicond. Manuf., 3(4), pp. 176-182.
6. Campbell, S. A., and Knutson, K. L., 1992, "Transient Effects in Rapid Thermal Processing," IEEE Trans. Semicond. Manuf., 5(4), pp. 302-307.
7. Hebb, J. P., and Jensen, K. F., 1998, "The Effect of Patterns on Thermal Stress During Rapid Thermal Processing of Silicon Wafers," IEEE Trans. Semicond. Manuf., 11(1), pp. 99-107.
8. Bentini, G., Correra, L., and Donolato, C., 1984, "Defects Introduced in Silicon Wafers During Rapid Isothermal Annealing: Thermoelastic and Thermoplastic Effects," J. Appl. Phys., 56(10), pp. 2922-2929.
9. Dilhac, J. M., Nolhier, N., Ganibal, C., and Zanchi, C., 1995, "Thermal Modeling of a Wafer in a Rapid Thermal Processor," IEEE Trans. Semicond. Manuf., 8, pp. 432-439.
10. Cho, Y. M., Paulraj, A., Kailath, T., and Xu, G., 1994, "A Contribution to Optimal Lamp Design in Rapid Thermal Processing," IEEE Trans. Semicond. Manuf., 7, pp. 34-41.
11. Huang, C. J., Yu, C. C., and Shen, S. H., 2000, "Selection of Measurement Location for the Control of Rapid Thermal Processor," Automatica, 36(5), pp. 705-715.
12. Huang, I., Liu, H. H., and Yu, C. C., 2000, "Design for Control Temperature Uniformity in Rapid Thermal Processor," Korean J. Chem. Eng., 17(1), pp. 111-117.
13. Sorrell, F. Y., Fordham, M. J., Öztürk, M. C., and Wortman, J. J., 1992, "Temperature Uniformity in RTF Furnaces," IEEE Trans. Electron Devices, 39(1), pp. 75-80.
14. Campbell, S. A., Ahn, K. L., Kanutson, K. L., Liu, B. Y. H., and Leighton, J. D., 1991, "Steady-State Thermal Uniformity and Gas Flow Patterns in a Rapid Thermal Processing Chamber," IEEE Trans. Semicond. Manuf., 4(1), pp. 14-20.
15. Huff, H. R., and Goodall, R. K., 1995, "Challenges and Opportunities for Dislocation Free Silicon Wafer Fabrication and Thermal Processing: An Historical Review," Proc. 3rd Int. Rapid Thermal Processing Conf., Amsterdam, The Netherlands, Aug. 30-Sept. 1, pp. 9-40.
16. Shishiguchi, S., Mineji, A., Matsuda, T., and Saito, S., 1997, "Boron Implanted Shallow Junction Formation by High-Temperature/Short-Time/High Ramping Rate (400°C/sec) RTA," VLSI Tech. Symp., pp. 89-90.
17. Collart, E. J. H., de Cock, G., Murrel, A. J., and Foad, M. A., 1998, "Characterization of Low Energy Boron Implantation and Fast Ramp-Up Rapid Thermal Annealing," Mat. Res. Soc. Symp. Proc., Vol. 525, pp. 227-235.
18. Incropera, F. P., and Dewitt, D. P., 1981, Fundamentals of Heat and Mass Transfer, John Wiley & Sons, New York.
19. Anderson, D. A., Tannehill, J. C., and Pletcher, R. H., 1984, Computational Fluid Mechanics and Heat Transfer, McGraw-Hill.
20. Reismann, H., and Pawlik, P. S., 1980, Elasticity, John Wiley & Sons, New York.
21. Boley, B. A., and Weiner, J. H., 1960, Theory of Thermal Stresses, John Wiley & Sons, New York.
22. Lin, S., and Chu, H. S., 2000, "Thermal Uniformity of 12-in Silicon Wafer During Rapid Thermal Processing by Inverse Heat Transfer Method," IEEE Trans. Semicond. Manuf., 13(4), pp. 448-456.
23. Nowinski, J. L., 1978, Theory of Thermoelasticity With Application, Sijthoff & Noordhoff.
24. Miyazaki, N., Uchida, H., Munakata, T., and Fujioka, K., 1992, "Thermal Stress Analysis of Silicon Bulk Single Crystal During Czochralski Growth," J. Cryst. Growth, 125, pp. 102-111.