A 2.4 GHz 0.18 μm CMOS self-biased cascode power amplifier with 23 dBm output power

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2002, Pages 294-295+467+285

  Sowlati, Tirdad ^a   Leenaerts, Domine ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ATTENUATION; CAPACITORS; CMOS INTEGRATED CIRCUITS; THRESHOLD VOLTAGE; TRANSCEIVERS;

POWER-ADDED-EFFICIENCY (PAE);

POWER AMPLIFIERS;

EID: 0036110465     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. A common-gate switched 0.9 W Class E power amplifier with 41% PAE in 0.25 mm CMOS
2. A 1.5 W class-F RF power amplifier in 0.25 mm CMOS technology
3. A CMOS RF power amplifier with parallel amplification for efficient power control
4. A 1 W 0.35 mm CMOS power amplifier for GSM-1800 with 45% PAE
5. Class 1 bluetooth power amplifier with 24 dBm output power and 48% PAE at 2.4 GHz in 0.25 mm CMOS
6. High density capacitance structures in submicron CMOS for RF applications