A 1W 0.35μm CMOS power amplifier for GSM-1800 with 45% PAE

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2001, Pages 158-159

  Fallesen, C ^a   Asbeck, P ^a  

^a Nokia Danmark AS   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CAPACITORS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC INDUCTORS; GATES (TRANSISTOR); GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; MICROPROCESSOR CHIPS; PRINTED CIRCUIT BOARDS; WIRELESS TELECOMMUNICATION SYSTEMS;

ADJACENT CHANNEL POWER RATIO (ACPR); POWER-ADDED-EFFICIENCY (PAE);

POWER AMPLIFIERS;

EID: 0035054904     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. A 2.5-V, 1-W monolithic CMOS RF power amplifier
2. Fully-integrated CMOS RF amplifiers
3. A common-gate switched, 0.9W class-E power amplifier with 41% PAE in 0.2mm CMOS
4. A 1.9 GHz 1-W CMOS class-E power amplifier for wireless communications
5. Microwave power amplifiers with digitally-controlled power supply voltage for high efficiency and high linearity