Studies of relationship between deep levels and R0A product in mesa type HgCdTe devices

Opto-Electronics Review

Volumn 7, Issue 4, 1999, Pages 361-367

  Yoshino, J ^a   Morimoto, J ^a   Wada, H ^b   Ajisawa, A ^c   Kawano, M ^c   Oda, N ^c  

^a NATIONAL DEFENSE ACADEMY   (Japan)

^b JAPAN DEFENSE AGENCY   (Japan)

^c NEC CORPORATION   (Japan)

Author keywords

Activation energy; Deep level; DLTS; HgCdTe; Mesa type; SADLTS

Indexed keywords

EID: 0000827961     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Article

References (14)

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