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Physical Review B - Condensed Matter and Materials Physics

Volumn 60, Issue 12, 1999, Pages 8909-8914

In situ observation of strain-induced optical anisotropy of ZnSxSe1-x/GaAs(110) during molecular-beam epitaxy

(7) Hanada, Takashi a,b,c Yasuda, Tetsuji b,c Ohtake, Akihiro b,d Hingerl, Kurt e Miwa, Shiro b,d,f Arai, Kenta a,b,c Yao, Takafumi a,b,c

a TOHOKU UNIVERSITY (Japan)

b JT RES CENTER FOR ATOM TECHNOLOGY (Japan)

c NATL INST FOR ADV INTERDISC RES (Japan)

d Angstrom Technology Partnership (Japan)

e PROFACTOR GMBH (Austria)

f SONY CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001337354 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.60.8909 Document Type: Article

Times cited : (7)

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