Origin of the optical anisotropy of GaAs(001)

Surface Science

Volumn 441, Issue 1, 1999, Pages 26-32

  Berkovits, V L ^a   Chiaradia, P ^b   Paget, D ^c   Gordeeva, A B ^a   Goletti, C ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF ROME TOR VERGATA   (Italy)

^c LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; DIMERS; ELECTRON TRANSITIONS; LIGHT REFLECTION; SPECTROSCOPIC ANALYSIS;

OPTICAL ANISOTROPY; OPTICAL TRANSITION; REFLECTION SPECTROSCOPY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033358861     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00779-7     Document Type: Article

References (23)

1. Aspnes D.E. J. Vac. Sci. Technol. B. 3:1985;1498.
2. Kamiya I., Aspnes D.E., Florez L.T., Harbison J.P. Phys. Rev. B. 46:1992;15894.
3. Kamiya I., Aspnes D.E., Tanaka H., Florez L.T., Harbison J.P., Bhat R. Phys. Rev. Lett. 68:1992;627.
4. Resch U., Scholz S.M., Rossow U., Muller A.B., Richter W., Forster A. Appl. Surf. Sci. 63:1993;106.
5. Paget D., Berkovits V.L., Gusev A.O. J. Vac. Sci. Technol. A. 13:1995;2368.
6. Schmidt W.G., Bechstedt F. Phys. Rev. B. 54:1996;16742. and references therein.
7. Chang Y.-C., Ren S.-F., Aspnes D.E. J. Vac. Sci. Technol. A. 10:1992;1856.
8. Murayama M., Shiraishi K., Nakayama T. Jpn. J. Appl. Phys. 37:1998;4109.
9. Murayama M., Nakayama T. Jpn. J. Appl. Phys. 36:1997;L268.
10. Uwai K., Kobayashi N. Phys. Rev. Lett. 78:1997;959.
11. Rossow U., Mantese L., Aspnes D.E. Scheffler M., Zimmerman R. Proc. 23rd Int. Conf. Physics of Semiconductors, Berlin. 1996;831 World Scientific, Singapore.
12. Morris S.J., Bass J.M., Matthai C.C. Phys. Rev. B. 52:1995;16739.
13. Eryigit R., Herman I.P. Phys. Rev. B. 56:1997;9263.
14. Shkrebtii A.I., Esser N., Richter W., Schmidt W.G., Bechstedt F., Fimland B.O., Kley A., Del Sole R. Phys. Rev. Lett. 81:1998;721.
15. Aspnes D.E. J. Opt. Soc. Am. 63:1973;1380.
16. Aspnes D.E., Kelso S.M., Logan R.A., Bhat R. J. Appl. Phys. 60:1986;754.
17. Berkovits V.L., Bessolov V.N., L'vova T.N., Novikov E.B., Safarov V.I., Khasieva R.V., Tsarenkov B.V. J. Appl. Phys. 70:1991;3707.
18. Kobayashi N., Kobayashi Y., Uwai K. J. Crystal. Growth. 170:1997;225.
19. Aspnes D.E., Studna A.A. Phys. Rev. B. 27:1983;985.
20. Esser N., Santos P.V., Kuball M., Cardona M., Arens M., Pahlke D., Richter W., Stietz F., Schaefer J.A., Fimland B.O. J. Vac. Sci. Technol. B. 13:1995;1666.
21. Rossow U., Mantese L., Aspnes D.E. J. Vac. Sci. Technol. B. 14:1996;3070.
22. Berkovits V.L., Gusev A.O., Lantratov V.M., Lvova T.V., Pushnyi A.B., Ulin V.P., Paget D. Phys. Rev. B. 54:1996;R8369.
23. Berkovits V.L., Paget D. Appl. Phys. Lett. 61:1992;1835.