A 0.1 - 50 GHz SiGe HBT distributed amplifier employing constant-k m-derived sections

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2003, Pages 923-926

  Aguirre, Jorge ^a   Plett, Calvin ^a  

^a CARLETON UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BANDPASS AMPLIFIERS; ELECTRIC IMPEDANCE; ELECTRIC LINES; FREQUENCY RESPONSE;

DISTRIBUTED AMPLIFIERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0043095282     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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2. R. Schmid, T. F. Meister, M. Rest, and H. M. Rein, "40-Gb/s EAM driver IC in SiGe bipolar technology," Electron. Lett., vol. 34, no 11, pp. 1095-1097, May 1998.
3. K. Ohhata, F. Arakawa, T. Masuda, N. Shiramizu, and K. Washio, "40-Gb/s analog IC chipset for optical receivers-AGC amplifier, full-wave rectifier and decision circuit-Implemented using self-aligned SiGe HBTs," in IEEE MTTS Int. Microwave Symp. Dig., vol. 3, pp. 1701 - 1704, May 2001.
4. T. Masuda, K. Ohhata, N. Shiramizu, E. Ohue, K. Oda, R. Hayami, H. Shimamoto, M. Kondo, T. Harada, and K. Wasio, "40-Gb/s 4:1 multiplexer and 1:4 demultiplexer IC module using SiGe HBTs," in IEEE MTT-S Int. Microwave Symp. Dig., vol. 3, pp. 1697 -1700, May 2001.
5. max) HBT and ASIC-compatible CMOS using copper interconnect," in Proc. IEEE BCTM, pp. 143 - 146, 2001
6. T. T. Y. Wong, Fundamentals of Distributed Amplification. Norwood MA: Artech, 1993.
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