SiGe regenerative frequency divider operating up to 63 GHz

Electronics Letters

Volumn 35, Issue 20, 1999, Pages 1730-1731

  Mullrich J ^a   Klein, W ^a   Khlifi, R ^b   Rein, H M ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); BIPOLAR TRANSISTORS; ELECTRIC IMPEDANCE; ELECTRIC INDUCTORS; ELECTRIC POWER SUPPLIES TO APPARATUS; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; MICROSTRIP LINES; MIXER CIRCUITS; SEMICONDUCTING SILICON COMPOUNDS;

BIPOLAR PRODUCTION TECHNOLOGY; DIVIDE BY TWO FREQUENCY DIVIDER; TRANSIMPEDANCE STAGE;

FREQUENCY DIVIDING CIRCUITS;

EID: 0344210390     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991200     Document Type: Article

References (8)

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2. UMEDA, Y., OSAFUNE, K., ENOKI, T., YOKOYAMA, H., ISHII, Y., and IMAMURA, Y: 'Over-60-GHz design technology for an SCFL dynamic frequency divider using InP-based HEMT's', IEEE Trans., 1998, MTT-46, pp. 1209-1214
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