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Volumn 34, Issue 1-4, 2001, Pages 55-63
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Ferroelectric Pb5Ge3O11 MFMOS capacitor for one transistor memory applications
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Author keywords
Ferroelectrics; FRAM; MOCVD; PGO; Thin film
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Indexed keywords
COMPOSITION EFFECTS;
ELECTRIC POTENTIAL;
FERROELECTRICITY;
LEAKAGE CURRENTS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MOS CAPACITORS;
PERMITTIVITY;
RAPID THERMAL ANNEALING;
SEMICONDUCTING LEAD COMPOUNDS;
THIN FILM TRANSISTORS;
GERMANIUM ETHOXIDE;
LEAD BISTETRAMETHYLHEPTADIONE;
ONE TRANSISTOR MEMORY DEVICE;
REMANENT POLARIZATION;
FERROELECTRIC DEVICES;
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EID: 0035027257
PISSN: 10584587
EISSN: None
Source Type: Journal
DOI: 10.1080/10584580108012874 Document Type: Conference Paper |
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Times cited : (15)
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References (10)
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