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Volumn 21, Issue 4, 2003, Pages 1381-1385

Analysis of stresses in Ru thin films prepared by chemical vapor deposition

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTAL MICROSTRUCTURE; DYNAMIC RANDOM ACCESS STORAGE; GRAIN GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; RUTHENIUM; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; STRESS ANALYSIS; TENSILE STRESS; X RAY CRYSTALLOGRAPHY;

EID: 0043031376     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1560713     Document Type: Article
Times cited : (5)

References (14)
  • 7
    • 0000293935 scopus 로고
    • edited by G. Hass and R. E. Thun (Academic, New York)
    • R. W. Hoffman, in Physics of Thin Films, edited by G. Hass and R. E. Thun (Academic, New York, 1966), Vol. 3, p. 211.
    • (1966) Physics of Thin Films , vol.3 , pp. 211
    • Hoffman, R.W.1
  • 12


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.