Logic AND/NAND gates based on three-terminal ballistic junctions

Electronics Letters

Volumn 38, Issue 17, 2002, Pages 951-953

  Reitzenstein, S ^a   Worschech, L ^a   Hartmann, P ^a   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); BALLISTICS; CARRIER CONCENTRATION; ELECTRIC SWITCHES; ELECTRON GAS; HETEROJUNCTIONS; LITHOGRAPHY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSPORT PROPERTIES;

NANOELECTRONIC DEVICE; THREE-TERMINAL BALLISTIC JUNCTIONS;

LOGIC GATES;

EID: 0037102040     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020652     Document Type: Article

References (6)

1. Functional nanoscale electronic devices assembled using silicon nanowire building block
2. Carbon nanotube field-effect inverters
3. Designing logic functions using an electron waveguide Y-branch switch
4. Analysis of an electron-wave Y-branch switch
5. Investigation of switching effects between the drains of an electron Y-branch switch
6. Bias-voltage-induced asymmetry in nanoelectronic Y-branches