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IEEE Transactions on Magnetics

Volumn 37, Issue 4 I, 2001, Pages 1979-1982

Effect of bias voltage and interdiffusion in Ir-Mn exchange-biased double tunnel junctions

(6) Saito, Y a Amano, M c Nakajima, K c Takahashi, S c Sagoi, M c Inomata, K b

a TOSHIBA CORPORATION (Japan)

b TOHOKU UNIVERSITY (Japan)

c NONE

Author keywords

AlOx Co Fe Ir Mn interfaces; Annealing temperature dependences; Bias voltage; Double tunnel junction; Interdiffusion

Indexed keywords

ANNEALING; ELECTRIC POTENTIAL; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); MAGNETORESISTANCE; SPUTTERING; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

BIAS VOLTAGE;

TUNNEL JUNCTIONS;

EID: 0035386625 PISSN: 00189464 EISSN: None Source Type: Journal
DOI: 10.1109/20.951027 Document Type: Article

Times cited : (10)

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