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Volumn 39, Issue 10 B, 2000, Pages

Correlation between barrier width, barrier height, and DC bias voltage dependences on the magnetoresistance ratio in Ir-Mn exchange biased single and double tunnel junctions

(6) Saito, Yoshiaki a Amano, Minoru a Nakajima, Kentaro a Takahashi, Shigeki a Sagoi, Masayuki a Inomata, Koichiro a,b

a TOSHIBA CORPORATION (Japan)

b TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CORRELATION METHODS; ELECTRIC POTENTIAL; ION BEAMS; IRON ALLOYS; MAGNETORESISTANCE; OXIDATION; PHOTOLITHOGRAPHY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SPUTTER DEPOSITION; ULTRAHIGH VACUUM;

BARRIER HEIGHT; BARRIER WIDTH; COBALT IRON; INDIUM MANGANESE; NICKEL IRON; SIMMONS EXPRESSIONS; TUNNELING MAGNETORESISTANCE;

TUNNEL JUNCTIONS;

EID: 0034291927 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.l1035 Document Type: Article

Times cited : (23)

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