Computer simulation of ion channeling in Si containing structurally relaxed point defects

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 211, Issue 1, 2003, Pages 50-54

  Lulli, G ^a   Albertazzi, E ^a   Bianconi, M ^a   Balboni, S ^b  

^a CNR   (Italy)

^b UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

Ion channeling; Monte Carlo simulation; Point defects

Indexed keywords

COMPUTER SIMULATION; CRYSTAL STRUCTURE; MICROSCOPIC EXAMINATION; MONTE CARLO METHODS; POINT DEFECTS; SILICON;

ION CHANNELING;

IONIZATION;

EID: 0042861737     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)01184-4     Document Type: Article

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