The stability of Si1-xGex strained layers on small-area trench-isolated silicon

Journal of Materials Research

Volumn 12, Issue 2, 1997, Pages 364-370

  Schonenberg, K ^a   Chan, Siu Wai ^b   Harame, D ^a   Gilbert, M ^a   Stanis, C ^a,c   Gignac, L ^a  

^a IBM RESEARCH   (United States)

^b Och Spine at New York Presbyterian Hospitals   (United States)

^c NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; OXIDATION; SEMICONDUCTING FILMS; SILICON WAFERS; STRESS RELAXATION; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

STRESSED ISOLATION WAFERS; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION (UHV CVD);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031079218     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1997.0052     Document Type: Article

References (19)

1. D. L. Harame, J. M. C. Stork, B. S. Meyerson, K. Y-J. Hsu, J. Cotte, K. A. Jenkins, J. D. Cressler, P. Restle, E. F. Crabbé, S. Subbanna, T.E. Tice, B.W. Scharf, and J.A. Yasaitis, Int. Elec. Devices Meeting Tech. Dig., p. 71 (1993).
2. J. Glenn, M. Case, D. Harame, B. Meyerson, and R. Poisson, Bipolar Circuits Tech. Meeting Proc., p. 186 (1995).
3. M. Case, S. Knorr, L. Larson, D. Rensch, D. Harame, B. Meyerson, and S. Rosenbaum, Bipolar Circuits Tech. Meeting Proc., p. 121 (1995).
4. D. Harame, K. Schonenberg, M. Gilbert, D. Nguyen-Ngoc, J. Malinowski, S-J. Jeng, B. Meyerson, J. Cressler, R. Groves, G. Berg, K. Tallman, K. Stein, G. Hueckel, C. Kermarrec, T. Tice, G. Fitzgibbons, K. Walter, D. Colavito, T. Houghton, N. Greco, T. Kebede, B. Cunningham, S. Subbanna, J. Comfort, and E. Crabbé, Int. Elec. Devices Meeting Tech. Dig., p. 437 (1994).
5. J. V. van der Merwe, Single Crystal Films, edited by M. H. Francombe and H. Sato (Pergamon, Oxford, 1964), p. 139.
6. J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974).
7. S. R. Stiffler, J. Comfort, C. L. Stanis, D. L. Harame, E. de Frésart, and B. S. Meyerson, J. Appl. Phys. 70, 1416 (1991).
8. S. R. Stiffler, C. L. Stanis, M. Goorsky, K. K. Chan, and E. de Frésart, J. Appl. Phys. 71, 4820 (1992).
9. A. Nishida, K. Nakagawa, E. Murakami, and M. Miyao. J. Appl. Phys. 71, 5913 (1992).
10. L. Vescan, T. Stoica, C. Dieker, and H. Luth, in Silicon-Based Optoelectronic Materials, edited by M. A. Tischler, R. T. Collins, M.L.W. Thewalt, and G. Abstreiter (Mater. Res. Soc. Symp. Proc. 298, Pittsburgh, PA, 1993), p. 45.
11. E. A. Fitzgerald, J. Vac. Sci. Technol. B 7, 782 (1989).
12. S. R. Stiffler, J. B. Laskey, C. W. Koburger, and W. S. Berry, IEEE Trans. Electron Devices 37, 1253 (1990).
13. Y. Takano and H. Kozuka, in Proc. 14th Conf. (1982 Int.) on Solid State Devices (Tokyo, 1982); Jpn. J. Appl. Phys. 22, suppl. 22-1, 553 (1983).
14. Y. Takano and H. Kozuka, in Proc. 14th Conf. (1982 Int.) on Solid State Devices (Tokyo, 1982); Jpn. J. Appl. Phys. 22, suppl. 22-1, 553 (1983).
15. P. M. Fahey, S. Mader, S. R. Stiffler, R. L. Mohler, J. D. Mis, and J. A. Slinkman. IBM J. Res. Dev. 36, 158 (1992).
16. D. L. Harame, J. H. Comfort, J. D. Cressler, E. F. Crabbé, Y-C. Sun, B. S. Meyerson, and T. Tice, IEEE Trans. Electron Devices 42, 455 (1995).
17. B. S. Meyerson, Appl. Phys. Lett. 48, 797 (1986).
18. J. Y. Tsao and B.W. Dodson, Appl. Phys. Lett. 53, 848 (1988).
19. S. Matsuda, C. Yoshino, H. Nakajima, K. Inou, S. Yoshitomi, Y. Katsumata, and H. Iwai, Int. Elec. Devices Meeting Tech. Dig. (1994), p. 885.