Interfacial reaction and electrical properties in the sputter-deposited Al/Ti ohmic contact to n-InP

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1115-1118

  Takeyama, Mayumi B ^a   Noya, Atsushi ^a   Hashizume, Tamotsu ^b   Hasegawa, Hideki ^b  

^a KITAMI INSTITUTE OF TECHNOLOGY   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

Author keywords

InP; Interfacial reaction; Metal semiconductor interface; Ohmic contact; RTA; Sputter deposition; Ti

Indexed keywords

ALUMINUM; AUGER ELECTRON SPECTROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; INTERFACES (MATERIALS); RAPID THERMAL ANNEALING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM PHOSPHIDE; SPUTTER DEPOSITION; TITANIUM; X RAY DIFFRACTION ANALYSIS;

INTERFACIAL REACTION; STABLE CONTACT CONFIGURATION;

OHMIC CONTACTS;

EID: 0032631777     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1115     Document Type: Article

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