Photoluminescence study of initial interdiffusion of SiGe/Si quantum wells grown by ultrahigh vacuum-chemical vapor deposition

Applied Physics Letters

Volumn 69, Issue 10, 1996, Pages 1444-1446

  Lafontaine, H ^a   Houghton, D C ^a   Rowell, N L ^a   Aers, G C ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042685786     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117609     Document Type: Article

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