Diffusion effects and luminescence in thin SiGe/Si layers

Solid State Phenomena

Volumn 47-48, Issue , 1996, Pages 473-484

  Gail, M ^a   Jung, W ^a   Brunner, J ^a   Schittenhelm, P ^a   Nutzel J F ^a   Abstreiter, G ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; GERMANIUM; GROWTH TEMPERATURE; LIGHT; MOLECULAR BEAM EPITAXY; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SURFACE DIFFUSION;

CONCENTRATION PROFILES; DOUBLE QUANTUM WELL STRUCTURES; ELECTROLUMINESCENCE INTENSITY; GROWTH CONDITIONS; LOW GROWTH TEMPERATURE; QUANTUM WELL LAYERS; STRONG DEPENDENCES; TRANSVERSE OPTICAL PHONONS;

SI-GE ALLOYS;

EID: 17544369633     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article

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