Carrier injection level dependence of post-breakdown metastability in semi-insulating GaAs

Solid State Communications

Volumn 127, Issue 7, 2003, Pages 499-503

  Luo, Y L ^a   Zhao, Y W ^b   Fung, S ^c   Beling, C D ^c  

^a SHANTOU UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

C. Crystal structure and symmetry; C. Point defects; D. Electronic transport; D. Phase transitions

Indexed keywords

CRYSTAL STRUCTURE; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRIC INSULATION; ELECTRIC RESISTANCE; PHOTOCONDUCTIVITY; POINT DEFECTS;

METASTABILITY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0042531572     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(03)00443-5     Document Type: Article

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