Electrically induced room temperature metastability in semi-insulating GaAs

Solid State Communications

Volumn 108, Issue 12, 1998, Pages 907-911

  Fung, S ^a   Luo, Y L ^a   Beling, C D ^a   Chen, T P ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC CURRENT MEASUREMENT; TRANSIENTS; VOLTAGE MEASUREMENT;

CURRENT TRANSIENT MEASUREMENT; METASTABLE STATE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032205563     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00486-4     Document Type: Article

References (17)

1. Kuisma, S., Saarinen, K., Hautojärvi, P. and Corbel, C., Phys. Rev., B55, 1996, 9609.
2. Šantic, Radic, N., Desnica, U.V. and Fillard, J.P., in Proc. 1994 Conf. On Semi-insulating III-V materials, Warsaw, Poland (Edited by M. Godlewski), p. 203.
3. Dabrowski, J. and Scheffler, M., Phys. Rev., B40, 1989, 10391.
4. Ren, G.B., Wang, Z.G., Xu, B. and Zhou, B., in Proc. 1994 Conf. On Semi-insulating III-V materials, Warsaw, Poland (Edited by M. Godlewski), p. 207.
5. Hoinkis, M., Weber, E.R., Walkiewicz, W., Lagowski, J., Matsui, M., Gatos, H.C., Meyer, B.K. and Spaeth, J.M., Phys. Rev., B39, 1989, 5538.
6. Campbell, A. and Streetman, B., Appl. Phys. Lett., 54, 1989, 445.
7. Crandell, R.S., Phys. Rev., B43, 1991, 4057.
8. Street, R.A., Appl. Phys. Lett., 59, 1991, 1084.
9. Redfield, D. and Bube, R.H., Photoinduced Defects in Semiconductors, Cambridge, New York, 1996.
10. McGregor, D.S., Rojeski, R.A., Knoll, G.F., Terry, F.L., East, J. and Eisen, Y., J. Appl. Phys., 75, 1994, 7910.
11. Berwick, K., Brozel, M.R., Buttar, C.M., Cowperthwaite, M., Sellin, P. and Hou, Y., Materials Science & Engineering B, 28, 1994, 485.
12. Castaldini, A., Cavallini, A., Polenta, L., Canali, C., del Papa, C. and Nava, F., Phys. Rev. B, 56, 1997, 9201.
13. Santana, J. and Jones, B.K., J. Appl. Phys., 83, 1997, 7699.
14. Sze, S.M., Physics of Semiconductor Devices, 2nd edn. Wiley, New York, 1981.
15. Paracchini, C. and Dallacasa, V., Solid State Commun., 69, 1989, 49.
16. Mazzer, M., Cola, A., Vasanelli, L., De Vittorio, M., Pennetta, C. and Reggiani, L., Inst. Phys. Conf. Ser. No. 157, Paper presented at Microsc. Semicond. Mater. Conf., Oxford, 7-10 April 1997, p. 539.
17. Luo, Y.L., Chen, T.P., Fung, S. and Beling, C.D., Solid State Commun., 101, 1997, 715.