메뉴 건너뛰기
Solid State Communications
Volumn 123, Issue 3-4, 2002, Pages 123-127
Two post-breakdown metastable phases in semi-insulating GaAs
(3)
Luo, Y L
a
Fung, S
b
Beling, C D
b
a
SHANTOU UNIVERSITY
(
China
)
b
UNIVERSITY OF HONG KONG
(
Hong Kong
)
Author keywords
A. Metastability; Breakdown; SI GaAs
Indexed keywords
ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; PHOTOIONIZATION; SEMICONDUCTOR SWITCHES;
METASTABLE PHASES;
SEMICONDUCTING GALLIUM ARSENIDE;
EID
:
0036646347
PISSN
:
00381098
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1016/S0038-1098(02)00224-7
Document Type
:
Article
Times cited : (
2
)
References (
21
)
1
0032205563
(1998)
Solid State Commun.
, vol.108
, pp. 907
Fung, S.
1
Luo, Y.L.
2
Beling, C.D.
3
Chen, T.P.
4
2
0031094949
(1997)
Solid State Commun.
, vol.101
, pp. 715
Luo, Y.L.
1
Chen, T.P.
2
Fung, S.
3
Beling, C.D.
4
3
0009790588
PhD Thesis, The University of Hong Kong, Hong Kong
(2000)
High electric field current transport in semi-insulating GaAs and InP
Luo, Y.L.
1
4
36549092894
(1980)
Appl. Phys. Lett.
, vol.54
, pp. 445
Campbell, A.
1
Streetman, B.
2
5
0032099581
(1998)
J. Appl. Phys.
, vol.83
, pp. 7699
Santana, J.
1
Jones, B.K.
2
6
0001326050
(1999)
J. Appl. Phys.
, vol.86
, pp. 1754
Islam, N.E.
1
Schamiloglu, E.
2
Fleddermann, C.B.
3
Schoenberg, J.S.H.
4
Joshi, R.P.
5
7
0026138238
(1991)
IEEE Trans. Electron. Devices
, vol.38
, pp. 701
Brinkman, R.P.
1
Schoenbach, K.H.
2
Stoudt, D.C.
3
Lakdawala, V.K.
4
Gerdin, G.A.
5
Kennedy, V.K.
6
8
0001411645
(1999)
J. Appl. Phys.
, vol.86
, pp. 3833
Joshi, R.P.
1
Kayasit, P.
2
Islam, N.
3
Schamiloglu, E.
4
Fleddermann, C.B.
5
Schoenberg, J.
6
9
0009792401
Warsaw, Poland
(1994)
Proceedings of Eighth Conference on Semi-insulating III-V Materials
, pp. 233
Alvarez, A.
1
Jiménez, J.
2
González, M.A.
3
10
0026477692
(1992)
Proceedings of the SPIE - The International Society for Optical Engineering
, vol.1632
, pp. 274
Zhao, H.
1
Hur, J.H.
2
Hadizad, P.
3
Gunderson, M.A.
4
11
0025717361
(1990)
IEEE Trans. Electron Devices
, vol.ED-37
, pp. 2532
White, W.T.
1
Dease, C.G.
2
Poche, M.D.
3
Khanaka, G.H.
4
12
0029378668
(1995)
IEEE Trans. Power Electron.
, vol.10
, pp. 615
Hudgins, J.L.
1
Bailey, D.W.
2
Dougal, R.A.
3
Venkatesan, V.
4
13
0030081453
(1996)
J. Appl. Phys.
, vol.79
, pp. 2084
Stoudt, P.J.
1
Kushner, M.
2
14
0009810084
(1995)
J. Appl. Phys.
, vol.77
, pp. 6645
Stoudt, P.J.
1
Kushner, M.
2
15
0001411645
(1999)
J. Appl. Phys.
, vol.86
, pp. 3833
Joshi, R.P.
1
Kayasit, P.
2
Islam, N.
3
Schamiloglu, E.
4
Fleddermann, C.B.
5
Schoenberg, J.
6
16
0026138238
(1991)
IEEE Trans. Electron. Devices
, vol.38
, pp. 701
Brinkman, R.P.
1
Schoenbach, K.H.
2
Stoudt, D.C.
3
Lakdawala, V.K.
4
Gerdin, G.A.
5
Kennedy, V.K.
6
17
0027904251
(1993)
J. Appl. Phys.
, vol.74
, pp. 6645
Capps, C.D.
1
Falk, R.A.
2
Adams, J.C.
3
18
0000628619
(1995)
Phys. Rev. B
, vol.52
, pp. 4855
Kozhevnikov, M.
1
Ashkinadze, B.M.
2
Cohen, E.
3
Arza, R.
4
19
0032487238
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 1988
Islam, N.E.
1
Schamiloglu, E.
2
Fleddermann, C.B.
3
20
0004206649
Academic Press, New York
(1970)
Current Injection in Solids
Lampert, M.A.
1
Mark, P.
2
21
0003619446
Artech House, Boston, London
(1993)
High-Power Optically Activated Solid-State Switches
Rosen, A.
1
Zutavern, F.
2
* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.