Optical absorption in amorphous hydrogenated silicon nitride thin films deposited by the electron cyclotron resonance plasma method and subjected to rapid thermal annealing

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 433-436

  Martinez F L ^a   Martil I ^a   Gonzalez Diaz G ^a   Bernal Oliva, A M ^b   Gonzalez Leal J M ^b   Marquez E ^b  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b UNIVERSITY OF CÁDIZ   (Spain)

Author keywords

Electron cyclotron resonance method; Optical properties; Rapid thermal annealing; Silicon nitride

Indexed keywords

AMORPHOUS FILMS; COMPOSITION EFFECTS; DEPOSITION; ELECTRON CYCLOTRON RESONANCE; FILM GROWTH; HIGH TEMPERATURE EFFECTS; HYDROGENATION; LIGHT ABSORPTION; PERCOLATION (SOLID STATE); RAPID THERMAL ANNEALING; SILICON NITRIDE;

TAUC COEFFICIENT; URBACH PARAMETER;

THIN FILMS;

EID: 0042530339     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01669-1     Document Type: Article

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