Structure and diffusion of oxygen and silicon interstitials in silicon

Journal of Alloys and Compounds

Volumn 286, Issue 1-2, 1999, Pages 254-257

  Dzelme, J ^a   Ertsinsh, I ^a   Zapol, B ^a   Misiuk, A ^b  

^a UNIVERSITY OF LATVIA   (Latvia)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL LATTICES; CRYSTAL SYMMETRY; ELECTRONIC STRUCTURE; MOLECULAR STRUCTURE; OXYGEN; POINT DEFECTS; QUANTUM THEORY;

QUANTUM CHEMICAL SIMULATION;

SEMICONDUCTING SILICON;

EID: 0032606797     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(98)01016-0     Document Type: Article

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