Dependence of oxygen precipitate size and strain on external stress at annealing of Cz-Si

Journal of Alloys and Compounds

Volumn 286, Issue 1-2, 1999, Pages 241-245

  Antonova, I V ^a   Misiuk, A ^b   Bak Misiuk, J ^c   Popov, V P ^a   Plotnikov, A E ^a   Surma, B ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATMOSPHERIC PRESSURE; CRYSTAL GROWTH FROM MELT; HYDROSTATIC PRESSURE; NUCLEATION; OXYGEN; STRAIN;

OXYGEN PRECIPITATES;

SEMICONDUCTING SILICON;

EID: 0032607504     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(98)01013-5     Document Type: Article

References (7)

1. A. Borghesi, B. Pivac, A. Sassella, A. Stella, J. Appl. Phys. 77 (1995) 4169.
2. J.P. Joly, V. Robert, Semicond. Sci. Technol. 9 (1994) 105.
3. A. Misiuk, Solid State Phenom. 19/20 (1991) 387.
4. A. Misiuk, W. Jung, Phys. Status Solidi (b) 198 (1996) 565.
5. J. Jung, M. Lefeld-Sosnowska, Philos. Mag. A 50 (1984) 233.
6. A. Misiuk, P. Zaumseil, Electrochem. Soc. Proc. 95-30 (1995) 194.
7. I.V. Antonova, A. Misiuk, V.P. Popov, L.I. Fadina, S.S. Shaimeev, Physica B 225 (1996) 251.