Influence of composition fluctuations in Al(Ga)As barriers on the exciton localization in thin GaAs quantum wells

Physical Review B - Condensed Matter and Materials Physics

Volumn 55, Issue 8, 1997, Pages 5239-5242

  Ramsteiner, M ^a   Hey, R ^a   Klann, R ^a   Jahn, U ^a   Gorbunova, I ^a   Ploog, K ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0348219811     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.55.5239     Document Type: Article

References (13)

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