Quantum mechanical effects on noise properties of nanoelectronic devices: Application to Monte Carlo simulation

IEEE Transactions on Electron Devices

Volumn 50, Issue 9, 2003, Pages 1830-1836

  Oriols, Xavier ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Monte Carlo methods; Nanotechnology; Noise; Semiconductor devices

Indexed keywords

ALGORITHMS; COMPUTATIONAL METHODS; COMPUTER SIMULATION; ELECTRIC CONDUCTANCE; ELECTRONS; MONTE CARLO METHODS; QUANTUM THEORY; SPURIOUS SIGNAL NOISE; TUNNEL JUNCTIONS;

MONTE CARLO ALGORITHM; NANOELECTRIC DEVICE; QUANTUM NOISE; SINGLE PARTICLE INJECTION MODEL; TUNNELING JUNCTION DEVICE;

ELECTRON DEVICES;

EID: 0042411922     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.815369     Document Type: Article

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