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IEEE Transactions on Electron Devices

Volumn 49, Issue 2, 2002, Pages 213-220

Sub-ft gain resonance of InP/InGaAs-HBTs

(3) Rohner, M b Willén, Bo c Jackel H a,b

a IEEE

b ETH ZURICH (Switzerland)

c ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

Base pushout; High frequency limitations; Hole velocity; InP HBT; Kirk effect; Unilateral power gain

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRIC CURRENTS; ELECTRIC NETWORK ANALYSIS; ELECTRIC NETWORK SYNTHESIS; ELECTRIC VARIABLES MEASUREMENT; EQUIVALENT CIRCUITS; FREQUENCIES; HOLE MOBILITY; RESONANCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS;

BASE PUSHOUT; CUT OFF FREQUENCY; ELECTRON VELOCITY; GAIN RESONANCE; HIGH FREQUENCY LIMITATIONS; HOLE VELOCITY; KIRK EFFECT; UNILATERAL POWER GAIN; VELOCITY MODULATION EFFECTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036475338 PISSN: 00189383 EISSN: None Source Type: Journal
DOI: 10.1109/16.981209 Document Type: Article

Times cited : (8)

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