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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 6 A, 2003, Pages 3354-3360

Analysis of hot carrier effect in low-temperature poly-Si gate-overlapped lightly doped drain thin film transistors

(4) Kawakita, Tetsuo a Nakagawa, Hidehiro a Uraoka, Yukiharu a Fuyuki, Takashi a

a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY (Japan)

Author keywords

GOLD; Low temperature poly Si; Reliability; System on panel; TFT

Indexed keywords

CARRIER CONCENTRATION; DEGRADATION; ELECTRIC PROPERTIES; EMISSION SPECTROSCOPY; IMPACT IONIZATION; INTERFACES (MATERIALS); LOW TEMPERATURE EFFECTS; MATHEMATICAL MODELS; RELIABILITY; SEMICONDUCTOR DOPING; THIN FILM TRANSISTORS;

HOT CARRIER EFFECT; LIGHTLY DOPED DRAIN; SINGLE DRAIN STRUCTURES;

POLYSILICON;

EID: 0042381849 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.3354 Document Type: Article

Times cited : (5)

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