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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1067-1070

Gate-overlapped lightly doped drain poly-Si thin film transistors by employing low-temperature doping techniques

(3) Choi, Kwon Young a Park, Kee Chan a Han, Min Koo a

a Seoul National University (South Korea)

Author keywords

Gate overlapped lightly doped drain (GO LDD); Hydrogenation; In situ doping; Ion shower doping; Leakage current; Poly Si; Thin film transistors

Indexed keywords

EID: 0013358072 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.1067 Document Type: Article

Times cited : (2)

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