Overgrowth on InP corrugations for 1.55 μm DFB LDs by reduction of carrier gas flow in LPMOCVD

Journal of Crystal Growth

Volumn 258, Issue 1-2, 2003, Pages 26-33

  Park, S W ^a   Moon, C K ^b   Kang, J H ^b   Kim, Y K ^b   Hwang, E H ^b   Koo, B J ^b   Kim, D Y ^b   Song, J I ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b NEOPTEK   (South Korea)

Author keywords

A1. Heat up process; A3. Metalorganic vapor phase epitaxy; B1. InAsP layer; B3. DFB laser diodes

Indexed keywords

DISTRIBUTED FEEDBACK LASERS; ELECTRIC CURRENTS; FLOW OF FLUIDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REDUCTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM PHOSPHIDE;

THRESHOLD CURRENTS;

SEMICONDUCTOR LASERS;

EID: 0042331083     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01377-0     Document Type: Article

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