Defect generation sue to surface corrugation in InGaAsP/InP DFB laser structures grown by MOVPE on grating-formed InP substrates

Journal of Crystal Growth

Volumn 93, Issue 1-4, 1988, Pages 825-831

  Sato, Kenji ^a   Oishi, Mamoru ^a   Itaya, Yoshio ^a   Nakao, Masashi ^a   Imamura, Yoshihiro ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS--EPITAXIAL GROWTH; MICROSCOPIC EXAMINATION--TRANSMISSION ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS--GROWTH;

CORRUGATED HETERO-INTERFACE; DISTRIBUTED FEEDBACK LASER; INDIUM PHOSPHIDE; METALORGANIC VAPOR PHASE EPITAXY;

LASERS, SEMICONDUCTOR;

EID: 0024103974     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(88)90626-4     Document Type: Article

References (14)

1. InGaAsP/InP distributed feedback buried heterostructure lasers with both facets cleaved structure
2. MOVPE-grown 1.5 µm distributed feedback lasers on corrugated InP substrates
3. Proc. 12th Intern. Symp. on GaAs and Related Compounds
4. TEM studies of MOVPE (Ga,In)As interfaces with InP substrates
5. Low threshold operation of 1.5-µm DFB laser diodes