Mass-transport effect on InP corrugation shape control of DFB-LDs under atmospheric pressure MOVPE

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 503-509

  Koui, Tomoaki ^a   Sakata, Yasutaka ^a   Sasaki, Yoshihiro ^a   Matsumoto, Takashi ^a   Komatsu, Keiro ^a  

^a NEC CORPORATION   (Japan)

Author keywords

AP MOVPE; Corrugation; DFB LD; Heating profile; InAsP piling layer; Mass transport

Indexed keywords

CRYSTAL ORIENTATION; DISTRIBUTED FEEDBACK LASERS; MASS TRANSFER; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

ATMOSPHERIC PRESSURE METALORGANIC VAPOR PHASE EPITAXY (AP-MOVPE); CORRUGATION SHAPE CONTROL;

SEMICONDUCTOR GROWTH;

EID: 0032477145     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00701-5     Document Type: Article

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