Formation of InAsP layer on corrugated InP susbstrate by MOVPE for buried grating of DFB lasers

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 606-609

  Kito, Masahiro ^a   Otsuka, Nobuyuki ^a   Yabuuchi, Yasufumi ^a   Nakamura, Shinji ^a   Ishino, Masato ^a   Matsui, Yasushi ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; COMPOSITION EFFECTS; DIFFRACTION GRATINGS; MASS TRANSFER; METALLORGANIC VAPOR PHASE EPITAXY; PRESSURE EFFECTS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

ABSORPTIVE GRATINGS; INJECTION CURRENT;

DISTRIBUTED FEEDBACK LASERS;

EID: 0030654647     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)