Epitaxial Culn(1-x)GaxS2 on Si(111): A perfectly lattice-matched system for x≈0.5

Applied Physics Letters

Volumn 83, Issue 8, 2003, Pages 1563-1565

  Metzner, H ^a   Cieslak, J ^a   Eberhardt, J ^a   Hahn, Th ^a   Muller M ^a   Kaiser, U ^a   Chuvilin, A ^a   Reislohner U ^a   Witthuhn, W ^a   Goldhahn, R ^b   Hudert, F ^b   Krausslich J ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; EPITAXIAL GROWTH; FILM GROWTH; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

PHOTOREFLECTANCE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0042281648     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1605239     Document Type: Article

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