Epitaxial growth of CuGaS2 on Si(111)

Applied Physics Letters

Volumn 81, Issue 1, 2002, Pages 156-158

  Metzner, H ^a   Hahn, Th ^a   Cieslak, J ^a   Grossner, U ^a   Reislohner U ^a   Witthuhn, W ^a   Goldhahn, R ^b   Eberhardt, J ^b   Gobsch, G ^b   Krausslich J ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHALCOPYRITE STRUCTURES; EXCITONIC EMISSION; PHOTOCURRENT SPECTRUM; ROOM TEMPERATURE; SI (1 1 1); SI(111) SUBSTRATE; TERNARY SEMICONDUCTORS; TETRAGONAL CHALCOPYRITE STRUCTURE; X-RAY DIFFRACTION DATA;

COPPER COMPOUNDS; EPITAXIAL FILMS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION;

EPITAXIAL GROWTH;

EID: 79956047316     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1492003     Document Type: Article

References (19)

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